V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, Z. F. Krasil'nik, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. V. Yurasov, A. N. Yablonskii, “On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 5,Pages <nobr>695

This article is cited in 6 papers

Semiconductor physics

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

V. Ya. Aleshkin^ab, N. V. Baidus^c, A. A. Dubinov^ab, Z. F. Krasil'nik^ab, S. M. Nekorkin^ac, A. V. Novikov^ab, A. V. Rykov^c, D. V. Yurasov^ba, A. N. Yablonskii^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: GaAs/AlGaAs laser structures with InGaAs quantum wells are grown by metal-organic chemical vapor deposition (MOCVD) on exact Si(001) substrates and substrates inclined by 4$^\circ$ to the [011] axis with a relaxed Ge buffer layer, emitting in the transparency region of bulk silicon (the wavelength is longer than 1100 nm at room temperature). The threshold power densities of stimulated emission, observed for the structures grown on exact and inclined substrates are 45 and 37 kW/cm$^2$, respectively.

Received: 16.11.2016
Accepted: 21.11.2016

DOI: 10.21883/FTP.2017.05.44431.8449