This article is cited in 9 papers

Semiconductor physics

Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode

A. I. Gusev^ab, S. K. Lyubutin^a, S. N. Rukin^a, S. N. Tsyranov<sup>ab

a</sup> Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, Ekaterinburg
^b Ural Federal University, Ekaterinburg

Abstract: The voltage drop process for the case of high-power thyristors switched to the conducting state by an impact-ionization wave excited by means of an overvoltage pulse with a nanosecond rise time is studied. In experiments, a voltage with a rise rate $dU/dt$ in the range of 0.5 to 6 kV/ns is applied to a thyristor with an operating voltage of 2 kV. Numerical simulation shows that the calculated and experimentally observed voltage drop times are in quantitative agreement only when the structure active area through which the switching current flows depends on $dU/dt$. The active area increases with dU/dt and with increasing initial silicon resistivity. In this case, the active area steadily approaches the total structure area at $dU/dt>$ 12 kV/ns.

Received: 06.10.2016
Accepted: 26.10.2016

DOI: 10.21883/FTP.2017.05.44429.8367

 English version: Semiconductors, 2017, 51:5, 649–656

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