Semiconductor structures, low-dimensional systems, quantum phenomena

Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field

A. B. Pashkovskii

Research and Production Corporation "Istok" named after Shokin, Fryazino, Moskovskaya obl.

Abstract: Analytical expressions for electron coefficients of transmission and reflection in a large-amplitude high-frequency electric field, with a frequency close to resonance, for asymmetric double- and triple-barrier resonant tunneling structures with thin high barriers forming open two-level systems are reported. The dependences of the width and shape of resonant levels on the high-frequency field amplitude are investigated. It is shown that, in these structures there are almost always conditions at which nonresonant scattering channels near the quantum levels can become absolutely transparent.

Received: 12.11.2015
Accepted: 19.10.2016

DOI: 10.21883/FTP.2017.05.44419.8111

 English version: Semiconductors, 2017, 51:5, 594–603

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