This article is cited in 7 papers

Electronic properties of semiconductors

Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov

Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow

Abstract: The dynamics of the long-wavelength edge of the spectrum of intrinsic stimulated picosecond emission occurring upon the picosecond pumping of GaAs is studied experimentally. The shortage of bandgap renormalization induced by the Coulomb interaction of charge carriers, compared to renormalization in the quasi-steady state, is observed. It is conceived that the shortage is caused by the fact that, under the experimental conditions of the study, the renormalization relaxation time is in the picosecond region.

Received: 28.09.2016
Accepted: 07.11.2016

DOI: 10.21883/FTP.2017.05.44412.8353

 English version: Semiconductors, 2017, 51:5, 565–570

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