A. S. Orekhov, T. S. Kamilov, B. V. Ibragimova, G. I. Ivakin, V. V. Klechkovskaya, “Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 6,Pages <nobr>740

This article is cited in 7 papers

XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016

Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

A. S. Orekhov^ab, T. S. Kamilov^c, B. V. Ibragimova^c, G. I. Ivakin^a, V. V. Klechkovskaya^a

^a Shubnikov Institute of Crystallography, Federal Research Center "Crystallography and Photonics", Russian Academy of Sciences, Moscow, Russia
^b National Research Centre "Kurchatov Institute", Moscow
^c Tashkent State Technical University

Abstract: The structural features of higher manganese-silicide films obtained by the diffusion doping of single-crystal silicon substrates with manganese vapor in a sealed cell and a flow-through quartz reactor with continuous pumping are comparatively analyzed. Scanning electron microscopy and high-resolution transmission electron microscopy show that a single-phase textured film of higher manganese silicide is formed in the evacuated cell. A change in the growth conditions from steady (cell) to quasi-steady-state (reactor) leads to the formation of polycrystalline islands of higher manganese silicide with nanoscale inclusions of the manganese-monosilicide phase.

Received: 12.12.2016
Accepted: 19.12.2016

DOI: 10.21883/FTP.2017.06.44547.06