G. P. Gaidar, P. I. Baransky, “Tensoresistance of <nobr>$n$</nobr>-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 7,Pages <nobr>975

Electronic properties of semiconductors

Tensoresistance of $n$-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it

G. P. Gaidar^a, P. I. Baransky^b

^a Institute for Nuclear Research of the National Academy of Sciences of Ukrainian
^b Institute of Semiconductor Physics NAS, Kiev

Abstract: Variations in the tensoresistance, tensomagnetoresistance, and magnetotensoresistance are experimentally and theoretically studied in wide ranges of magnetic-field strengths, 0 kOe $\le H\le$ 100 kOe, and mechanical stresses, 0 GPa $\le X \le$ 0.7 GPa, at 77 K under conditions of nondegenerate statistics of the electron gas in $n$-Ge crystals with different crystallographic orientations.

Received: 29.11.2016
Accepted: 07.12.2016

DOI: 10.21883/FTP.2017.07.44657.8465