This article is cited in 4 papers

XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016

On the conduction-band structure of bismuth telluride: optical absorption data

A. N. Weis^a, L. N. Luk'yanova^b, V. A. Kutacov<sup>b

a</sup> Peter the Great St. Petersburg Polytechnic University
^b Ioffe Institute, St. Petersburg

Abstract: The optical absorption spectra of $n$-Bi$_{2}$Te$_{3}$ in the range 40–300 meV are studied at room temperature in relation to the electron concentration and sample thickness in order to determine the parameters of the additional subband in the conduction band of Bi$_{2}$Te$_{3}$ and to clarify the possible effect of this subband on charge-carrier transport. It is shown that bismuth telluride is a direct-gap semiconductor with an additional subband in the conduction band. These data are consistent with the results of studies of quantum oscillations in $n$-Bi$_{2}$Te$_{3}$ in high magnetic fields at temperatures below 20 K.

Received: 27.12.2016
Accepted: 12.01.2017

DOI: 10.21883/FTP.2017.07.44630.16

 English version: Semiconductors, 2017, 51:7, 836–839

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