This article is cited in 3 papers

Electronic properties of semiconductors

Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon

N. A. Sobolev^a, A. E. Kalyadin^a, E. I. Shek^a, K. F. Shtel'makh<sup>ab

a</sup> Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University

Abstract: Influence of the measurement temperature in the range 5–130 K on the photoluminescence spectra of (113) defects in Si implanted with 350-keV oxygen ions at doses of 3.7 $\times$ 10$^{14}$ cm$^{-2}$ and annealed at a temperature of 700$^\circ$C for 1 h in a chlorine-containing atmosphere is studied. The temperature dependence of the line intensity is characterized by portions of intensity increase with an activation energy of 23.1 meV and intensity quenching with activation energies of 41.9 and 178.3 meV. With increasing temperature, the lines are shifted to longer wavelengths and their FWHM increases.

Received: 20.02.2017
Accepted: 01.03.2017

DOI: 10.21883/FTP.2017.09.44880.8561

 English version: Semiconductors, 2017, 51:9, 1133–1135

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