Manufacturing, processing, testing of materials and structures

Diffusion-Controlled growth of Ge nanocrystals in SiO$_{2}$ films under conditions of ion synthesis at high pressure

I. E. Tyschenko^a, A. G. Cherkov<sup>b

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: The growth of Ge nanocrystals in SiO$_{2}$ films is studied in relation to the dose of implanted Ge$^+$ ions and the annealing temperature at a pressure of 12 kbar. It is established that the dependences of the nanocrystal dimensions on the content of Ge atoms and the annealing time are described by the corresponding root functions. The nanocrystal radius squared is an exponential function of the inverse temperature. The dependences correspond to the model of the diffusion-controlled mechanism of nanocrystal growth. From the temperature dependence of the nanocrystal dimensions, the diffusion coefficient of Ge in SiO$_{2}$ at a pressure of 12 kbar is determined: $D$ = 1.1 $\cdot$ 10$^{-10}\exp(-1.43/kT)$. An increase in the diffusion coefficient of Ge under pressure is attributed to the change in the activation volume of the formation and migration of point defects. Evidence in favor of the interstitial mechanism of the diffusion of Ge atoms to nanocrystal nuclei in SiO$_{2}$ is reported.

Received: 20.02.2017
Accepted: 07.03.2017

DOI: 10.21883/FTP.2017.10.45023.8564

 English version: Semiconductors, 2017, 51:10, 1364–1369

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