This article is cited in 1 paper

Semiconductor physics

Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

N. V. Dikareva^a, B. N. Zvonkov^a, O. V. Vikhrova^a, S. M. Nekorkin^a, V. Ya. Aleshkin^ab, A. A. Dubinov<sup>ab

a</sup> Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The results of investigation of a metal-organic-vapor-phase-epitaxy-grown GaAsSb/GaAs/InGaP laser structure are presented. Steady two-band generation caused by spatially direct and indirect optical transitions is obtained. Observation of the sum frequency shows the effective intracavity mixing of modes in semiconductor lasers of such a type.

Received: 14.03.2017
Accepted: 20.03.2017

DOI: 10.21883/FTP.2017.10.45022.8580

 English version: Semiconductors, 2017, 51:10, 1360–1363

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