This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Criterion for strong localization on a semiconductor surface in the Thomas–Fermi approximation

V. B. Bondarenko, A. V. Filimonov

Peter the Great St. Petersburg Polytechnic University

Abstract: The localization behavior of a two-dimensional electron gas confined at the surface of a heavily doped semiconductor under conditions of the “natural” size effect in the space-charge region is investigated. The scattering of low-energy electrons by the chaotic potential formed at the surface by point charges of ionized impurities is analyzed and the electron mean free path is determined. A criterion for strong localization in this two-dimensional electron system is obtained on the basis of the Ioffe–Regel criterion.

Received: 21.02.2017
Accepted: 28.02.2017

DOI: 10.21883/FTP.2017.10.45015.8507

 English version: Semiconductors, 2017, 51:10, 1321–1325

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