This article is cited in 3 papers

Electronic properties of semiconductors

Effects of local photoexcitation of high-concentration charge carriers in silicon

A. M. Musaev

Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia

Abstract: The phenomena occurring at the local pulsed photoexcitation of intrinsic nonequilibrium highconcentration charge carriers in silicon are experimentally investigated. The effect of a substantial increase in the lifetime of photoexcited charge carriers is found. It is shown that the effect of a substantial increase in the lifetime of charge carriers is caused by a change in the degree of degeneracy and displacement of the impurityrecombination level towards the Fermi level due to local thermoelastic deformation of the crystal and the corresponding distribution of the concentration of nonequilibrium charge carriers.

Received: 17.01.2017
Accepted: 06.02.2017

DOI: 10.21883/FTP.2017.10.45010.8520

 English version: Semiconductors, 2017, 51:10, 1290–1294

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