This article is cited in 4 papers

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

V. E. Nikiforov^a, D. S. Abramkin^ab, T. S. Shamirzaev<sup>abc

a</sup> Novosibirsk State University
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^c Ural Federal University, Ekaterinburg

Abstract: It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.

Received: 27.04.2017

DOI: 10.21883/FTP.2017.11.45112.26

 English version: Semiconductors, 2017, 51:11, 1513–1516

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