V. I. Borisov, N. A. Kuvshinova, S. P. Kurochka, V. E. Sizov, M. V. Stepushkin, A. G. Temiryazev, “Semiconductor structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11,Pages <nobr>1534

This article is cited in 4 papers

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Semiconductor structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography

V. I. Borisov^a, N. A. Kuvshinova^a, S. P. Kurochka^b, V. E. Sizov^a, M. V. Stepushkin^ab, A. G. Temiryazev^a

^a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
^b National University of Science and Technology «MISIS», Moscow

Abstract: Quasi-one-dimensional semiconductor structures with a variable longitudinal potential profile are fabricated by pulse power nanolithography, which is carried out using an atomic force microscope. Structures are fabricated on the basis of AlGaAs/GaAs heterostructures with a deep (130 nm from the surface) twodimensional electron gas. The channel potential profile is formed with the help of sectioned in-plane gates formed on both channel sides. The electrical parameters of the structures measured at temperatures down to 1.5 K confirmed the efficiency of the applied method to fabricate insulating regions with lateral sizes of $\sim$10 nm.

Received: 27.04.2017
Accepted: 12.05.2017

DOI: 10.21883/FTP.2017.11.45106.20