This article is cited in 1 paper

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures

S. M. Plankina^a, O. V. Vikhrova^b, B. N. Zvonkov^b, A. V. Nezhdanov^a, I. Yu. Pashen'kin<sup>a

a</sup> National Research Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The capabilities of a technique based on combined photoluminescence and Raman-spectroscopy measurements upon lateral scanning across the cleaved edge of heterostructures for monitoring the strain profile and the thickness of epitaxial layers are demonstrated. The characteristics of a laser heterostructure with InGaAs/GaAsP quantum wells are investigated by this technique. It is shown that photoluminescence from different layers of the structure can be recorded separately. It is established that both the frequency of the InP-like phonon mode and the photoluminescence energy can be used to determine the composition of the In$_{x}$Ga$_{1-x}$P alloy. The two methods yield close results.

Received: 27.04.2017
Accepted: 12.05.2017

DOI: 10.21883/FTP.2017.11.45101.15

 English version: Semiconductors, 2017, 51:11, 1456–1459

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