This article is cited in 2 papers

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors

V. Ya. Aleshkin, L. V. Gavrilenko

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The times of the cascade capture of electrons at a donor–acceptor charged dipole for the case of the pulsed and steady-state excitation of impurity photoconductivity in GaAs, Ge, and Si are calculated. It is shown that the dependence of the frequency of the cascade capture on the concentration of the charged impurity becomes sublinear in semiconductors under consideration at a concentration of the charged impurity higher than 10$^{13}$ cm$^{-3}$.

Received: 27.04.2017
Accepted: 12.05.2017

DOI: 10.21883/FTP.2017.11.45098.12

 English version: Semiconductors, 2017, 51:11, 1444–1448

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