This article is cited in 3 papers

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Optimization of the superlattice parameters for THz diodes

D. G. Pavel'ev^a, A. P. Vasil'ev^b, V. A. Kozlov^ac, E. S. Obolenskaya^a, S. V. Obolensky^a, V. M. Ustinov<sup>d

a</sup> Lobachevsky State University of Nizhny Novgorod
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^d Ioffe Institute, St. Petersburg

Abstract: Previously, GaAs/AlAs superlattices with a small active area ($\sim$1 $\mu$m$^2$) were used by us to design mixer diodes. It was established that these superlattices can efficiently be used in the terahertz (THz) range. It was theoretically and experimentally shown that short-period (i.e., containing few periods) superlattices in the composition of harmonic mixers have significant advantages in comparison with multi-period (with 50–100 or more periods) superlattices at frequencies of up to 5.3 THz. In this study, the superlattice design is optimized and the operation efficiency of short-period superlattices is shown to be determined to a large extent by the transition regions located at the superlattice edges.

Received: 27.04.2017
Accepted: 12.05.2017

DOI: 10.21883/FTP.2017.11.45097.11

 English version: Semiconductors, 2017, 51:11, 1439–1443

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