This article is cited in 3 papers

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Contactless characterization of manganese and carbon delta-layers in gallium arsenide

O. S. Komkov^a, A. V. Kudrin<sup>b

a</sup> Saint Petersburg Electrotechnical University "LETI"
^b Lobachevsky State University of Nizhny Novgorod

Abstract: Single manganese and carbon $\delta$-layers in undoped GaAs are analyzed by photoreflectance spectroscopy. The strength of built-in electric fields, determined by this method, is shown to increase with increasing layer concentration of introduced impurities and well correlate with technological and Hall data. The use of phase-sensitive photoreflectance makes it possible to measure the surface field and the field induced by $\delta$-doping separately. This fact allows one to determine without contact the fraction of electrically active Mn impurity and reveal the contribution of carbon $\delta$-layers to the characteristics of GaAs-based heterostructures.

Received: 27.04.2017
Accepted: 12.05.2017

DOI: 10.21883/FTP.2017.11.45093.07

 English version: Semiconductors, 2017, 51:11, 1420–1426

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