This article is cited in 8 papers

Surface, interfaces, thin films

Al-doped and pure ZnO thin films elaborated by sol-gel spin coating process for optoelectronic applications

M. Maache^a, T. Devers^b, A. Chala<sup>c

a</sup> Department of Science of matter, Ziane Achour University, Djelfa, Algeria
^b University of Orleans
^c Department of Science of matter, Mohamed Khider University, Biskra, Algeria

Abstract: Pure and aluminum-doped zinc oxide thin films were grown by spin coating at room temperature. As a starting material, zinc acetate was used. The dopant source was aluminum nitrate; the dopant molar ratio was varied between 1 and 10%. Structural analysis reveals that all films consist of single hexagonal wurtzite phase ZnO, and a preferential orientation along c-axis. They have a homogeneous surface. The measurements show that the films are nanostructured. The transmittance is greater than 75% in the visible region. The band gap energy decreases with the addition of dopant (Al) in prepared thin films and the resistivity decreases significantly.

Received: 08.10.2015
Revised: 20.03.2017

Language: English

DOI: 10.21883/FTP.2017.12.45182.8078

 English version: Semiconductors, 2017, 51:12, 1604–1610

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