This article is cited in 1 paper

Micro- and nanocrystalline, porous, composite semiconductors

X-ray study of the superstructure in heavily doped porous indium phosphide

M. E. Boiko, M. D. Sharkov, L. B. Karlina, A. M. Boiko, S. G. Konnikov

Ioffe Institute, St. Petersburg

Abstract: An indium-phosphide InP sample subjected to the pore-generation procedure and then doped with S atoms is studied by the methods of X-ray diffraction analysis (XRD) and small-angle X-ray scattering (SAXS) (with Cu$K_{\alpha1}$-radiation). The XRD data demonstrate that the sample consists of (coherent) aligned homogeneous components. A point detector is used to obtain, in the anomalous transmission mode by Borrmann, a set of SAXS curves at sample positions varied by azimuthal rotations. The SAXS data are used to simulate a 2D SAXS pattern for the sample under study, which makes it possible to determine the long-distance translation symmetry and, consequently, the presence of a superstructure. The interplanar distances in the superstructure in the directions (110) and (1$\bar1$0) of the InP lattice are found to be $\sim$260 and 450 nm, respectively. The symmetry group of the superstructure is determined as $C_{2v}$ in the (001) plane of the sample lattice.

Received: 23.05.2017
Accepted: 24.05.2017

DOI: 10.21883/FTP.2018.01.45324.8628

 English version: Semiconductors, 2018, 52:1, 84–87

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