This article is cited in 3 papers

Surface, interfaces, thin films

Mechanism of the semiconductor–metal phase transition in Sm$_{1-x}$ Gd$_{x}$S thin films

V. V. Kaminskii, S. M. Soloviev, G. D. Khavrov, N. V. Sharenkova

Ioffe Institute, St. Petersburg

Abstract: The influence of the Gd content on the semiconductor–metal phase transition in polycrystalline Sm$_{1-x}$ Gd$_{x}$S thin films produced by the flash evaporation of a powder in vacuum is studied. It is shown that the basic factor of the physical mechanism of the phase transition is compression of the film material. It is established that the films retain their semiconductor properties only up to a Gd content of $x$ = 0.12.

Received: 11.04.2017
Accepted: 19.04.2017

DOI: 10.21883/FTP.2018.01.45317.8606

 English version: Semiconductors, 2018, 52:1, 41–43

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