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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 1, Pages 35–37 (Mi phts5937)

This article is cited in 1 paper

Electronic properties of semiconductors

Effect of hydrostatic pressure on the static permittivity of germanium

A. M. Musaev

Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia

Abstract: The dependence of the static permittivity of single-crystal germanium on hydrostatic pressure up to $P\approx$ 7.4 GPa is studied experimentally. As the pressure is increased to $P\approx$ 4 GPa, the permittivity of Ge decreases by a factor of $\sim$13 to $\varepsilon$ = 1.22. As the pressure is increased further to $P\approx$ 7 GPa, a moderate increase in $\varepsilon$ to the initial value is observed. In the range 7–7.4 GPa, the permittivity increases to a value larger than 1000. The experimental dependences obtained in the study substantially differ from the previously known dependences.

Received: 28.06.2016
Accepted: 22.05.2017

DOI: 10.21883/FTP.2018.01.45315.8359


 English version:
Semiconductors, 2018, 52:1, 31–33

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