I. E. Tyschenko, G. K. Krivyakin, V. A. Volodin, “Ion-beam synthesis of the crystalline Ge phase in SiO$_{x}$N$_{y}$ films upon annealing under high pressure”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 2,Pages 280

Manufacturing, processing, testing of materials and structures

Ion-beam synthesis of the crystalline Ge phase in SiO$_{x}$N$_{y}$ films upon annealing under high pressure

I. E. Tyschenko^a, G. K. Krivyakin^a, V. A. Volodin^ab

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: The nucleation of the crystalline Ge phase in SiO$_{x}$N$_{y}$ films implanted with Ge$^+$ ions with the energy 55 keV to doses of 2.1 $\times$ 10$^{15}$–1.7 $\times$ 10$^{16}$ cm$^{-2}$ and then annealed at a temperature of $T_a$ = 800–1300$^{\circ}$C under pressures of 1 bar and 1–12 kbar is studied. From analysis of the Raman spectra, it is concluded that amorphous Ge precipitates increase in size upon hydrostatic compression at a temperature of 1000$^{\circ}$C. Raman scattering at optical phonons localized in Ge nanocrystals is observed only after annealing of the samples with the highest content of implanted atoms at a temperature of 1300$^{\circ}$C. In the photoluminescence spectra, a peak is observed at the wavelength $\sim$730 nm. The peak is considered to be the manifestation of the quantum-confinement effect in nanocrystals $\sim$3 nm in size.

Received: 20.03.2017
Accepted: 17.04.2017

DOI: 10.21883/FTP.2018.02.45457.8595