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Electronic properties of semiconductors
Effect of dislocation-related deep levels in heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs $p$–$i$–$n$ structures on the relaxation time of nonequilibrium carriers
M. M. Sobolev,
F. Yu. Soldatenkov Ioffe Institute, St. Petersburg
Abstract:
The results of an experimental study of the capacitance–voltage
$(C-V)$ characteristics and deep-level transient spectroscopy (DLTS) spectra of
$p^+$–
$p^0$–
$i$–
$n^0$ homostructures based on undoped dislocationfree GaAs layers and InGaAs/GaAs and GaAsSb/GaAs heterostructures with homogeneous networks of misfit dislocations, all grown by liquid-phase epitaxy (LPE), are presented. Deep-level acceptor defects identified as
$HL$2 and
$HL$5 are found in the epitaxial
$p^0$ and
$n^0$ layers of the GaAs-based structure. The electron and hole dislocation-related deep levels, designated as, respectively,
$ED$1 and
$HD$3, are detected in InGaAs/GaAs and GaAsSb/GaAs heterostructures. The following hole trap parameters: thermal activation energies
$(E_t)$, capture cross sections
$(\sigma_p)$, and concentrations
$(N_t)$ are calculated from the Arrhenius dependences to be
$E_t$ = 845 meV,
$\sigma_p$ = 1.33
$\times$ 10
$^{-12}$ cm
$^2$,
$N_t$ = 3.80
$\times$ 10
$^{14}$ cm
$^{-3}$ for InGaAs/GaAs and
$E_t$ = 848 meV,
$\sigma_p$ = 2.73
$\times$ 10
$^{-12}$ cm
$^2$,
$N_t$ = 2.40
$\times$ 10
$^{14}$ cm
$^{-3}$ for GaAsSb/GaAs heterostructures. The concentration relaxation times of nonequilibrium carriers are estimated for the case in which dislocation-related deep acceptor traps are involved in this process. These are 2
$\times$ 10
$^{-10}$ s and 1.5
$\times$ 10
$^{-10}$ s for, respectively, the InGaAs/GaAs and GaAsSb/GaAs heterostructures and 1.6
$\times$ 10
$^{-6}$ s for the GaAs homostructures.
Received: 05.07.2017
Accepted: 12.07.2017
DOI:
10.21883/FTP.2018.02.45440.8680
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