This article is cited in 2 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Use of the atomic structure of silicon crystals to obtain multi-tip field-emission sources of electrons

R. K. Yafarov

Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences

Abstract: The field-emission properties of field electron sources produced using the atomic structure of silicon crystals, the heterophase vacuum-plasma self-organization of island carbon coatings, and highly anisotropic plasma-chemical etching under weak-adsorption conditions are studied. A correlation between the morphological and field-emission characteristics of field cathode microstructures on silicon crystals with various conductivity types is ascertained. The results of experimental studies are interpreted using the Fowler–Nordheim theory in conjunction with changes in the compositions of the surface phases formed in fabricating emitting silicon projections.

Received: 03.03.2017
Accepted: 20.03.2017

DOI: 10.21883/FTP.2018.02.45435.8571

 English version: Semiconductors, 2018, 52:2, 137–142

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