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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 3, Pages 359–365 (Mi phts5898)

Semiconductor physics

Optimal doping of diode current interrupters

A. S. Kyuregyan

Russian Electrotechnical Institute Named after V. I. Lenin

Abstract: An analytical solution to the problem of a decrease in energy losses $\Omega$ in diode current interrupters is derived for the stage of recovery of the blocking ability due to optimization of the dopant distribution $N (x)$ over the structure thickness. The distribution $N(x)$ close to optimal is found; it makes it possible to decrease $\Omega$ by 30–55% compared with standard design interrupters with homogeneously doped high-resistivity layers.

Received: 13.02.2017
Accepted: 07.03.2017

DOI: 10.21883/FTP.2018.03.45622.8550


 English version:
Semiconductors, 2018, 52:3, 341–347

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© Steklov Math. Inst. of RAS, 2026