This article is cited in 3 papers

Electronic properties of semiconductors

Deep radiation-induced defect centers created by a fast neutron flux in CdZnTe single crystals

S. V. Plyatsko, L. V. Rashkovetskyi

Institute of Semiconductor Physics NAS, Kiev

Abstract: The effect of a fast neutron flux ($\Phi$ = 10$^{14}$-10$^{15}$ cm$^{-2}$) on the electrical and photoluminescence properties of $p$-CdZnTe single crystals is studied. Isothermal annealing is performed ($T$ = 400–500 K), and the activation energy of the dissociation of radiation-induced defects is determined at $E_D\approx$ 0.75 eV.

Received: 30.08.2017
Accepted: 05.09.2017

DOI: 10.21883/FTP.2018.03.45615.8373

 English version: Semiconductors, 2018, 52:3, 305–309

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