This article is cited in 5 papers

Electronic properties of semiconductors

Isoelectronic oxygen centers and conductivity of CdS crystals compared with PbS crystals

N. K. Morozova^ab, B. N. Miroshnikov<sup>ab

a</sup> National Research University "Moscow Power Engineering Institute"
^b Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, Moscow, Russia

Abstract: The influence of oxygen on the electrical properties of PbS are well known. The goal of this study is to compare and reveal this phenomenon in CdS(O) single crystals, which we have studied in detail previously. The experiments are performed for CdS single crystals with a known oxygen concentration, deviation from stoichiometry, and definite set of intrinsic point defects. They allow us to confirm the results described for PbS and clarify their nature. It is shown that the phenomenon is based on the capture of free charge carriers– electrons–by acceptor-like isoelectronic O$_S$ centers with the subsequent formation of associates having a complex structure. Previous conclusions on the dissolution mechanism of oxygen in CdS with deviations from stoichiometry are confirmed. Variations in the electrical properties in oxygen-activated PbS(O), similarly to CdS(O), showed that isoelectronic oxygen centers O$_S$ are present in lead sulfide.

Received: 21.12.2016
Accepted: 26.12.2016

DOI: 10.21883/FTP.2018.03.45611.8493

 English version: Semiconductors, 2018, 52:3, 278–281

Bibliographic databases:

•