This article is cited in 2 papers

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

Kinetics of structural changes on GaSb(001) singular and vicinal surfaces during the UHV annealing

A. V. Vasev, M. A. Putyato, V. V. Preobrazhenskii, A. K. Bakarov, A. I. Toropov

Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia

Abstract: The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2 $\times$ 5) $\to$ (1 $\times$ 3) is a complex of two transitions–order $\to$ disorder and disorder $\to$ order. The influence of the degree of surface miscut from the singular face on the dimension of the transition (2 $\times$ 5) $\to$ DO was studied. The activation energies of structural transitions ex(2 $\times$ 5) $\to$ (2 $\times$ 5), (2 $\times$ 5) $\to$ DO and DO $\to$ (1 $\times$ 3) on singular and vicinal faces GaSb(001) were determined.

Language: English

 English version: Semiconductors, 2018, 52:5, 664–666

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