T. V. Malin, D. S. Milakhin, V. G. Mansurov, Yu. G. Galitsyn, A. S. Kozhukhov, V. V. Ratnikov, A. N. Smirnov, V. Yu. Davydov, K. S. Zhuravlev, “Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 6,Pages <nobr>643

This article is cited in 10 papers

Manufacturing, processing, testing of materials and structures

Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers

T. V. Malin^a, D. S. Milakhin^a, V. G. Mansurov^a, Yu. G. Galitsyn^a, A. S. Kozhukhov^a, V. V. Ratnikov^b, A. N. Smirnov^b, V. Yu. Davydov^b, K. S. Zhuravlev^ac

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Ioffe Institute, St. Petersburg
^c Novosibirsk State University

Abstract: The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of $\sim$1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of $\sim$2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.

Received: 04.04.2017
Accepted: 10.04.2017

DOI: 10.21883/FTP.2018.06.45930.8600