This article is cited in 12 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Study of the properties of II–VI and III–V semiconductor quantum dots

A. I. Mikhailov, V. F. Kabanov, I. A. Gorbachev, E. G. Glukhovskoy

Saratov State University

Abstract: The specific features of the electron spectra of II–VI and III–V semiconductor quantum dots are studied experimentally and theoretically. Analysis of the samples makes it possible to estimate the positions of the first three levels in the electron spectrum of the quantum object. Good qualitative and quantitative agreement between the experimental results and theoretical estimates is attained. It is shown that the mechanism of the experimentally observed field-emission current through a quantum dot is satisfactorily described by Morgulis–Stratton theory in experimental conditions.

Received: 31.08.2017
Accepted: 25.09.2017

DOI: 10.21883/FTP.2018.06.45923.8443

 English version: Semiconductors, 2018, 52:6, 750–754

Bibliographic databases:

•