Micro- and nanocrystalline, porous, composite semiconductors

Study of current flow mechanisms in a CdS/$por$-Si/$p$-Si heterostructure

V. V. Tregulov^a, V. G. Litvinov^b, A. V. Ermachikhin<sup>b

a</sup> Ryazan State University S. A. Esenin
^b Ryazan State Radio Engineering University

Abstract: The temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/$por$-Si/$p$-Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the CdS/$por$-Si/$p$-Si heterojunction, carrier tunneling in the $por$-Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.

Received: 16.05.2017
Accepted: 22.11.2017

DOI: 10.21883/FTP.2018.07.46047.8648

 English version: Semiconductors, 2018, 52:7, 891–896

Bibliographic databases:

•