This article is cited in 13 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Electrical properties of $p$-NiO/$n$-Si heterostructures based on nanostructured silicon

H. P. Parkhomenko, M. N. Solovan, P. D. Mar'yanchuk

Chernivtsi National University named after Yuriy Fedkovych

Abstract: Silicon nanowires are formed on $n$-Si substrates by chemical etching. $p$-NiO/$n$-Si heterostructures are fabricated by reactive magnetron sputtering. The energy diagram of anisotype $p$-NiO/$n$-Si heterostructures is constructed according to the Anderson model. The current–voltage and capacitance–voltage characteristics are measured and analyzed. The main current-transport mechanisms through the $p$-NiO/$n$-Si heterojunction under forward and reverse biases are established.

Received: 11.04.2017
Accepted: 15.05.2017

DOI: 10.21883/FTP.2018.07.46041.8609

 English version: Semiconductors, 2018, 52:7, 859–863

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