Electronic properties of semiconductors

Radiative recombination, carrier capture at traps, and photocurrent relaxation in PbSnTe : In with a composition close to band inversion

D. V. Ishchenko, I. G. Neizvestnyi

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: Based on the notions that PbSnTe:In is a direct-gap semiconductor, the radiative-recombination lifetime is calculated, and the photocurrent relaxation and dependences of the instantaneous electron and hole lifetime are calculated under the assumption that PbSnTe:In is a disordered structure containing capture centers. These calculations explain such experimentally observed peculiarities of PbSnTe:In as a high photosensitivity in a wide wavelength range, pinning of the Fermi level, and long-term photocurrent relaxation. Calculations are also compared with experimental data and the possible parameters of photodetectors are evaluated.

Received: 18.04.2017
Accepted: 28.11.2017

DOI: 10.21883/FTP.2018.07.46036.8614

 English version: Semiconductors, 2018, 52:7, 836–839

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