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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 7, Pages 686–693 (Mi phts5773)

This article is cited in 1 paper

Electronic properties of semiconductors

Kinetics of the variation in the magnetic impurity ion concentration in Pb$_{1-x-y}$Sn$_{x}$V$_{y}$Te alloys upon doping

E. P. Skipetrovab, N. S. Konstantinova, L. A. Skipetrovaa, A. V. Knotkobc, V. E. Slynkod

a Faculty of Physics, Lomonosov Moscow State University
b Lomonosov Moscow State University, Faculty of Materials Science
c Lomonosov Moscow State University, Faculty of Chemistry
d Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Kiev

Abstract: The field and temperature dependences of the magnetization (magnetic fields $B\le$ 7.5 T, temperatures $T$ = 2.0–75 K) of samples from a Pb$_{1-x-y}$Sn$_{x}$V$_{y}$Te ($x$ = 0.08, $y$ = 0.01) single-crystal ingot synthesized by the Bridgman–Stockbarger method. It is established that the sample magnetization contains two main contributions, notably, the paramagnetism of vanadium ions and diamagnetism of the crystal lattice. The field and temperature dependences of the magnetization are approximated by the sum of modified Brillouin functions corresponding to the paramagnetic contributions of vanadium in two different charge states and the diamagnetic contribution linear in terms of field. The concentrations of vanadium ions in two different magnetic states and the character of their variation along the ingot are determined within the scope of the alloy's electronic-structure rearrangement because of doping. The results are compared with the data of X-ray fluorescence microanalysis and the results of studying the galvanomagnetic properties of the samples.

Received: 31.10.2017
Accepted: 08.11.2017

DOI: 10.21883/FTP.2018.07.46035.8760


 English version:
Semiconductors, 2018, 52:7, 828–835

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