Abstract:
A method for the matrix calculation of the spectral characteristics of AII–BVI semiconductors doped with iron-group ions is proposed, which takes into account all possible interactions in the ion and the effect of intramolecular surrounding fields of different symmetries. A technique for calculating the oscillator strength on the basis of eigenfunctions of the resulting states of 3$d^{7}$, 3$d^{8}$, and 3$d^{6}$ electron configurations is developed. The spectral regularities of the Co$^{2+}$, Ni$^{2+}$, and Fe$^{2+}$ energy structures for the ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, and CdTe materials are studied. All possible spectral bands in iron-group ions implanted in AII–BVI semiconductors in the range of 1.3–3 $\mu$m are established. The possibility of implementing the laser effect on these materials is estimated.
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