This article is cited in 4 papers

Amorphous, glassy, organic semiconductors

Dielectric relaxation in thin layers of the Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system

R. A. Castro, N. I. Anisimova, A. A. Kononov

Herzen State Pedagogical University of Russia, St. Petersburg

Abstract: The results of studying dielectric relaxation processes in the Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system are presented. The existence of the non-Debye relaxation process caused by the distribution of relaxors over the relaxation time according to the Cole–Cole model is revealed. The energy and structural parameters are calculated: the activation energy $E_p$ = 0.40 eV and the molecular dipole moment $\mu$ = 1.08 D. The detected features are explained within the model according to which the chalcogenide-glass structure is a set of dipoles formed by charged defects such as $D^+$ and $D^-$.

Received: 16.05.2017
Accepted: 31.05.2017

DOI: 10.21883/FTP.2018.08.46218.8649

 English version: Semiconductors, 2018, 52:8, 1043–1046

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