This article is cited in 3 papers

Surface, interfaces, thin films

On recombination processes in CdS–PbS films

A. G. Rokakh, M. I. Shishkin, V. S. Atkin

Saratov State University

Abstract: The transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS)$_{0.9}$–(PbS)$_{0.1}$ films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is shown. The films are excited over the entire active surface and pointwise (within one crystallite). The surface recombination rate and the lifetime of majority charge carriers at different generation rates and characters of excitation are estimated. A comparative table of recombination parameters of CdS and CdS–PbS films is presented.

Received: 12.07.2017
Accepted: 05.09.2017

DOI: 10.21883/FTP.2018.08.46209.8687

 English version: Semiconductors, 2018, 52:8, 986–992

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