A. A. Dubinov, V. Ya. Aleshkin, S. V. Morozov, “Lowering the lasing threshold by doping in mid-infrared lasers based on HgCdTe with HgTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 9,Pages <nobr>1100

This article is cited in 3 papers

Semiconductor physics

Lowering the lasing threshold by doping in mid-infrared lasers based on HgCdTe with HgTe quantum wells

A. A. Dubinov^ab, V. Ya. Aleshkin^ab, S. V. Morozov^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: The possibility of significant lowering of the interband lasing threshold in laser structures of the mid-infrared region based on HgCdTe with HgTe quantum wells by doping with donors, which introduce $\delta$ layers near quantum wells, is proposed and analyzed. It is shown that at an optimum surface donor concentration in the $\delta$ layer of 4 $\times$ 10$^{10}$ cm$^{-2}$ and an operating temperature of $>$ 40 K, the lasing threshold at a wavelength of 20 $\mu$m can be lowered more than twofold.

Keywords: HgTe QWs, HgTe Quantum, Quantum Wells (QW), Quantum Cascade Lasers (QCLs), Threshold Current Density.

Received: 30.01.2018
Accepted: 20.02.2018

DOI: 10.21883/FTP.2018.09.46159.8833