M. P. Teplyakov, O. S. Ken, D. N. Goryachev, O. M. Sreseli, “Transport and photosensitivity in structures: a composite layer of silicon and gold nanoparticles on <nobr>$p$</nobr>-Si”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 9,Pages <nobr>1071

This article is cited in 4 papers

Micro- and nanocrystalline, porous, composite semiconductors

Transport and photosensitivity in structures: a composite layer of silicon and gold nanoparticles on $p$-Si

M. P. Teplyakov^a, O. S. Ken^b, D. N. Goryachev^b, O. M. Sreseli^b

^a Peter the Great St. Petersburg Polytechnic University
^b Ioffe Institute, St. Petersburg

Abstract: The temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with $p$-type conductivity are investigated. The current transfer mechanisms in the structures and their influence on the photosensitivity of structures with different amounts of gold in the composite layer are determined.

Keywords: Composite Layer, Current Transfer Mechanism, Laser Electrodispersion, Photosensitivity Spectra, Silicon Nanoparticles.

Received: 26.02.2018
Accepted: 12.03.2018

DOI: 10.21883/FTP.2018.09.46232.8852