R. A. Castro, G. I. Grabko, A. A. Kononov, “Low-frequency dielectric relaxation in iron-doped Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 9,Pages 1038

This article is cited in 1 paper

Amorphous, glassy, organic semiconductors

Low-frequency dielectric relaxation in iron-doped Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system

R. A. Castro^a, G. I. Grabko^b, A. A. Kononov^a

^a Herzen State Pedagogical University of Russia, St. Petersburg
^b Zabaikalsky State University, Chita

Abstract: The dielectric relaxation processes in Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system are investigated. The introduction of an iron impurity into a glass matrix is shown to sharply increase the permittivity $\varepsilon$' and decrease the dissipation factor tan$\delta$. The found regularities are explained within the cluster structure (two-phase) model of doped glass.

Keywords: Glassy Systems, Dissipation Factor Tan$\delta$, Doped Glasses, Iron Impurities, Dipole Polarization Relaxation.

Received: 11.12.2017
Accepted: 31.01.2018

DOI: 10.21883/FTP.2018.09.46282.8795