This article is cited in 2 papers

Surface, interfaces, thin films

Structure and electrical properties of zirconium-doped tin-oxide films

A. V. Sitnikov, O. V. Zhilova, I. V. Babkina, V. A. Makagonov, Yu. E. Kalinin, O. I. Remizova

Voronezh State Technical University

Abstract: Thin Zr-stabilized SnO$_2$ films are fabricated by ion-beam reactive sputtering. The amorphous thin-film SnO$_2$ samples with various Zr concentrations are synthesized in a single production process. The influence of heat treatment on the structure and electrical properties of the synthesized films is studied. The onset of crystallization in thin-film Sn–Zr–O systems is observed at 673 and 773 K, which is accompanied by the appearance of metastable phases. Being heated to 873 K, these phases are transformed into Sn + Sn$_2$O$_3$. It is found that the electrotransfer the film crystallization at temperatures close to room temperature is thermally activated with an activation energy of 0.78 eV. Tin-oxide films doped with Zr from 0.6 to 3.9 at % manifest the property of hydrogen-gas sensitivity after crystallization.

Keywords: SnO$_2$ Films, Film Crystallization, Single Production Process, Zirconia Solid Solution, Zirconium Concentration.

Received: 21.12.2017
Accepted: 05.02.2018

DOI: 10.21883/FTP.2018.09.46146.8804

 English version: Semiconductors, 2018, 52:9, 1118–1122

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