This article is cited in 1 paper

Surface, interfaces, thin films

Effect of high-dose carbon implantation on the phase composition, morphology, and field-emission properties of silicon crystals

R. K. Yafarov

Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences

Abstract: The study of high-dose carbon-ion implantation without post-process annealing reveals significant modification of the morphology, surface-layer phase composition, and field-emission properties of silicon wafers. The effect of the electrical conductivity type on the evolution of the silicon-crystal surface morphology, upon a variation in the irradiation dose, and a high content of diamond-like phases in the region of microprotrusions at the maximum dose regardless of the electrical conductivity type are found. It is demonstrated that the high-dose implantation of carbon in silicon wafers with a pre-structured surface increases the maximum density of field-emission currents by more than two orders of magnitude.

Keywords: Field Emission Properties, High-dose Carbon, Typical Electrical Conductivity, Diamond-like Phase, Implanted Carbon Ions.

Received: 02.10.2017
Accepted: 18.10.2017

DOI: 10.21883/FTP.2018.09.46230.8691

 English version: Semiconductors, 2018, 52:9, 1104–1109

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