E. A. Tolkacheva, V. P. Markevich, L. I. Murin, “Optical properties and the mechanism of the formation of V$_{2}$O$_{2}$ and V$_{3}$O$_{2}$ vacancy–oxygen complexes in irradiated silicon crystals”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 9,Pages 973

This article is cited in 6 papers

Spectroscopy, interaction with radiation

Optical properties and the mechanism of the formation of V$_{2}$O$_{2}$ and V$_{3}$O$_{2}$ vacancy–oxygen complexes in irradiated silicon crystals

E. A. Tolkacheva^a, V. P. Markevich^b, L. I. Murin^a

^a Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus
^b University of Manchester, Manchester, United Kingdom

Abstract: The processes of the formation and annealing of V$_{n}$O$_{m} (n,m\ge2)$ vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm$^{-1}$ as being related to local vibrational modes of V$_{2}$O$_{2}$ and V$_{3}$O$_{2}$ complexes, respectively.

Keywords: Vacancy-oxygen Complexes, Local Vibrational Modes (LVMs), Fast Electrons, Interstitial Oxygen Atoms, DLTS Data.

Received: 20.12.2017
Accepted: 09.01.2018

DOI: 10.21883/FTP.2018.09.46141.8806