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10 papers
Manufacturing, processing, testing of materials and structures
Positive charge in SOS heterostructures with interlayer silicon oxide
V. P. Popov,
V. A. Antonov,
V. I. Vdovin Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
The continuous transfer of (001)Si layers 0.2–1.7
$\mu$m thick by implanted hydrogen to the
$c$-sapphire surface during direct bonding at high temperatures of 300–500
$^{\circ}$C is demonstrated for the first time. The formation of an intermediate silicon-oxide layer SiO
$_ x$ during subsequent heat treatments at 800–1100
$^{\circ}$C, whose increase in thickness (up to 3 nm) correlates with an increase in the positive charge
$Q_i$ at the heterointerface to
$\sim$1.5
$\times$ 10
$^{12}$ cm
$^{-2}$ in contrast to the negative charge at the SiO
$_{x}$/Al
$_{2}$O
$_{3}$ ALD heterointerface. During silicon-layer transfer to sapphire with a thermal silicon-dioxide layer,
$Q_i$ decreases by more than an order of magnitude to 5
$\times$ 10
$^{10}$ cm
$^{-2}$ with an increase in the SiO
$_2$ thickness from 50 to 400 nm, while the electron and hole mobilities barely differ from the values in bulk silicon. Based on these results, a qualitative model of the formation of positively charged oxygen vacancies in a 5-nm sapphire layer near the bonding interface is proposed.
Keywords:
Intermediate Silicon-oxide Layer, Heterointerface, Thermal Silicon Dioxide Layer, Sapphire Layer, Drain Gate Characteristics. Received: 12.02.2018
Accepted: 19.02.2018
DOI:
10.21883/FTP.2018.10.46465.8844
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