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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 10, Pages 1203–1206 (Mi phts5716)

This article is cited in 2 papers

Manufacturing, processing, testing of materials and structures

On the growth of FeIn$_{2}$S$_{2}$Se$_{2}$ single crystals and the study of their properties

I. V. Bondar'a, S. A. Detkova, Yu. V. Kasyukb, Yu. A. Fedotovab

a Belarussian State University of Computer Science and Radioelectronic Engineering, Minsk, Belarus
b Research Institute for Nuclear Problems Belarusian State University, Minsk

Abstract: FeIn$_{2}$S$_{2}$Se$_{2}$ single crystals are grown for the first time by the Bridgman method, and their composition and properties are determined. It is found that the single crystals are hexagonal in structure. The arrangement of Fe ions in the structure of the FeIn$_{2}$S$_{2}$Se$_{2}$ crystals is studied by nuclear $\gamma$-resonance spectroscopy. From the transmittance spectra in the region of the fundamental absorption edge, the band gap of the single crystals grown in the study is determined.

Keywords: Fundamental Absorption Edge, Vertical Bridgman Method, Feinsinger, Lorentzian Spectral Line, Relative Reflection Intensities.

Received: 15.11.2017
Accepted: 23.11.2017

DOI: 10.21883/FTP.2018.10.46462.8766


 English version:
Semiconductors, 2018, 52:10, 1323–1326

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