This article is cited in 4 papers

Semiconductor physics

Luminescence spectra of high-power violet and ultraviolet gallium nitride-based LEDs

V. V. Volkov^a, L. M. Kogan^b, A. N. Turkin^a, A. I. Yunovich<sup>a

a</sup> Faculty of Physics, Lomonosov Moscow State University
^b Scientific-and-Production Center "Optel", Moscow, Russia

Abstract: The electroluminescence spectra of high-power light-emitting diodes (LEDs) based on p – n heterostructures of the InGaN/AlGaN/GaN type emitting in the visible short-wavelength and ultraviolet spectral regions (the range from 370 to 460 nm) are investigated. The shape of spectra is described by a model taking into account a two-dimensional combined density of states and potential fluctuations. Additional long-wavelength peaks are found in emission spectra. The emission power of ultraviolet and violet LEDs reaches 233 mW at a current of 350 mA, and the external quantum yield reaches 23% at the maximum (near a current of 100 mA).

Keywords: Violet LEDs, Electroluminescence Spectra, High-power LEDs, External Quantum Yield, Potential Fluctuations.

Received: 23.11.2017
Accepted: 11.12.2017

DOI: 10.21883/FTP.2018.10.46456.8775

 English version: Semiconductors, 2018, 52:10, 1293–1297

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