Yu. N. Drozdov, O. I. Khrykin, P. A. Yunin, “Verification of the hypothesis on the thermoelastic nature of deformation of $a$(0001)GaN layer grown on the sapphire $a$-cut”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11,Pages 1380

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Verification of the hypothesis on the thermoelastic nature of deformation of $a$(0001)GaN layer grown on the sapphire $a$-cut

Yu. N. Drozdov^a, O. I. Khrykin^a, P. A. Yunin^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b National Research Lobachevsky State University of Nizhny Novgorod

Abstract: The deformation of $a$(0001)GaN epitaxial layer on the (11$\bar2$0) sapphire $a$-cut is studied by X-ray diffractometry. Anisotropic-layer deformation is calculated by reference data on the thermal expansion coefficients of gallium nitride and sapphire. A comparison of the calculated and experimental deformation confirms the hypothesis on the thermoelastic character of GaN deformation on the sapphire $a$-cut. This result makes it possible, in particular, to assess theoretically the elastic deformation and piezoelectric field in pseudomorphic heterostructures with GaN layers on the sapphire $a$-cut as a virtual substrate or a buffer layer.

Keywords: Thermoelastic Nature, Gallium Nitride, Thermoelastic Character, Pseudomorphic Heterostructures, Virtual Substrate.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.11.46602.24