This article is cited in 2 papers

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Heterostructures with InAs/AlAs quantum wells and quantum dots grown on GaAs/Si hybrid substrates

D. S. Abramkin^ab, M. O. Petrushkov^a, M. A. Putyato^a, B. R. Semyagin^a, T. S. Shamirzaev<sup>acb

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c Ural Federal University, Ekaterinburg

Abstract: Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.

Keywords: Hybrid Substrates, Heterostructures, Quantum Dots (QDs), AlAs Matrix, Excitation Power Density.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.11.46601.23

 English version: Semiconductors, 2018, 52:11, 1484–1490

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