This article is cited in 1 paper

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Radiation resistance of terahertz diodes based on GaAs/AlAs superlattices

D. G. Pavel'ev^a, A. P. Vasil'ev^b, V. A. Kozlov^ac, E. S. Obolenskaya<sup>a

a</sup> Lobachevsky State University of Nizhny Novgorod
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The radiation resistance to the gamma-neutron irradiation ($\sim$1 MeV) of diodes based on symmetric GaAs/AlAs 30-period superlattices is for the first time studied theoretically and experimentally. The model band diagram and equivalent circuit of the structure under study are used in calculations. Calculations are performed in the quasi-hydrodynamic approximation taking into account the heating of diodes under study by flowing current. The results of calculating the current–voltage characteristics and limiting operating frequencies of the diodes before and after gamma-neutron irradiation correlate well with the experimental data.

Keywords: Radiation Resistance, Limiting Operating Frequencies, Quasi-hydrodynamic Approximation, Band Diagram Model, Negative Differential Conductivity.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.11.46595.17

 English version: Semiconductors, 2018, 52:11, 1448–1456

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